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2SK3113 - MOS Field Effect Transistor

Key Features

  • Low on-state resistance RDS(on) = 4.4 MAX. (VGS = 10 V, ID = 1.0 A) Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) Gate voltage rating 30 V Avalanche capability ratings +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25.

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SMD Type MOS Field Effect Transistor 2SK3113 MOSFICET Features Low on-state resistance RDS(on) = 4.4 MAX. (VGS = 10 V, ID = 1.0 A) Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) Gate voltage rating 30 V Avalanche capability ratings +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol Rating Unit VDSS 600 V VGSS 30 V ID 2.