BD539B Datasheet and Specifications PDF

The BD539B is a NPN SILICON POWER TRANSISTORS.

Key Specifications

PackageTO-220-3
Mount TypeThrough Hole
Pins3
Max Operating Temp150 °C
Min Operating Temp-65 °C
Part NumberBD539B Datasheet
ManufacturerPower Innovations Limited
Overview BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD540 Ser. pply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC Ptot Ptot TA Tj Tstg TL VCEO VCBO SYMBOL VALUE 40 60 80 100 120 40 60 80 100 120 5 5 45 2 -65 .
Part NumberBD539B Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Complement to Type BD540B ·Minimum Lot-to-Lot variations for robust device performance and rel. Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375.

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