BS107A Datasheet and Specifications PDF

The BS107A is a Small Signal MOSFET.

Key Specifications

PackageTO-92
Pins3
Height5.33 mm
Length5.2 mm
Width4.19 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Datasheet4U Logo
Part NumberBS107A Datasheet
Manufactureronsemi
Overview BS107A Small Signal MOSFET 250 mA, 200 V, N−Channel TO−92 Features • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage G.
* AEC
*Q101 Qualified and PPAP Capable
* This is a Pb
*Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Drain
*Source Voltage Gate
*Source Voltage
* Continuous
* Non
*repetitive (tp ≤ 50 ms) Drain Current Continuous (Note 1) Pulsed (Note 2) Total Device Dissipation @ TA = 25°C Derate above 25°C .
Part NumberBS107A Datasheet
DescriptionN-channel enhancement mode vertical D-MOS transistor
ManufacturerNXP Semiconductors
Overview N-channel enhancement mode vertical D-MOS transistor in TO-92 envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer .
* Direct interface to C-MOS, TTL, etc.
* High-speed switching
* No second breakdown DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer driv.
Part NumberBS107A Datasheet
DescriptionN-Channel MOSFET
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS107/D TMOS Switching N–Channel — Enhancement 2 GATE 1 DRAIN BS107 BS107A ® 3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage. = 1.0 mAdc, VDS = VGS) Static Drain
*Source On Resistance BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 mAdc) (ID = 250 mAdc) 1.0
* 3.0 Vdc Ohms SMALL
* SIGNAL CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer .

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