Part Number	DTA114GE
Manufacturer	onsemi
Overview	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by DTA114GE/D Product Preview General Purpose Transistor PNP Bipolar Junction Transistor with a 10 kW Base–Emitter Resistor MAXIMUM RATING. lector *Emitter Breakdown Voltage (IE = 720 mAdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0 Adc) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0 Adc) ON CHARACTERISTICS DC Current Gain (VCE = 5.0 Vdc, IC = 5.0 mAdc) Collector *Emitter Saturation Voltage (IC = 10 mAdc, IB = 500 mAdc) hFE 30 VCE(sat).