FDC642P Datasheet and Specifications PDF

The FDC642P is a P-Channel MOSFET.

Key Specifications

PackageSOT-23
Mount TypeSurface Mount
Pins6
Height1.1 mm
Length3 mm
Width1.7 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Datasheet4U Logo
Part NumberFDC642P Datasheet
ManufacturerKexin Semiconductor
Overview SMD Type P-Channel MOSFET FDC642P (KDC642P) ( SOT-23-6 ) 0.4+0.1 -0.1 ■ Features ● VDS (V) =-20V ● ID =-4 A ● RDS(ON) < 65mΩ (VGS =-4.5V) ● RDS(ON) < 100mΩ (VGS =-2.5V) 6 5 4 1 2 3 +0.01 -0..
* VDS (V) =-20V
* ID =-4 A
* RDS(ON) < 65mΩ (VGS =-4.5V)
* RDS(ON) < 100mΩ (VGS =-2.5V) 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 0.4 MOSFET Unit:mm 0.15 +0.02 -0.02 +0.1 1.1 -0.1 0-0.1 +0.1 0.68 -0.1 1D 2D 3G D6 D5 S4
* Absolute Maximum Ratings Ta = 25℃ Par.
Part NumberFDC642P Datasheet
DescriptionP-Channel MOSFET
Manufactureronsemi
Overview „ Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A „ Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A „ Fast switching speed „ Low gate charge (11nC typical) „ High performance trench technology for. General Description
* Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A
* Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A
* Fast switching speed
* Low gate charge (11nC typical)
* High performance trench technology for extremely low rDS(on)
* SuperSOTTM-6 package: small footprint (72% smaller tha.
Part NumberFDC642P Datasheet
DescriptionP-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for s. • • • • • -4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V Fast switching speed. Low gate charge (7.2nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick.

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