| Part Number | FMMT495 Datasheet |
|---|---|
| Manufacturer | WILLAS |
| Overview |
only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assum.
* Low VCE(sat) * hFE characterised up to 1A for high current gain hold up * For general amplification FMMT495 SCHEMATIC DIAGRAM SOT-23 PACKAGE 3 1 2 1. BASE 2. EMITTER 3. COLLECTOR MECHANICAL DATA * Case：Molded plastic,SOT-23 * Polarity：Shown above * Terminals :Plated terminals, solderable per MIL-. |
FMMT495 Datasheet and Specifications PDF
The FMMT495 is a NPN Plastic-Encapsulate Transistors.
| Part Number | FMMT495 Datasheet |
|---|---|
| Description | NPN Transistors |
| Manufacturer | ANBON |
| Overview |
Features
• Epitaxial planar die construction • Surface mount package • NPN • Compliant to Halogen-free
Mechanical data
• Epoxy:UL94-V0 rated flame retardant • Case : SOT-23 • Terminals : Matte tin-pla.
* Epitaxial planar die construction * Surface mount package * NPN * Compliant to Halogen-free Mechanical data * Epoxy:UL94-V0 rated flame retardant * Case : SOT-23 * Terminals : Matte tin-plated leads, solderable per MIL-STD-202, Method 208 FMMT495 NPN Transistors Package outline SOT-23 0.040 (1.0. |
| Part Number | FMMT495 Datasheet |
|---|---|
| Description | NPN Silicon Epitaxial Planar Transistor |
| Manufacturer | Galaxy Microelectronics |
| Overview |
NPN Silicon Epitaxial Planar Transistor FMMT495
Features
BVCEO > 150V IC = 1A continuous collector current ICM = 2A peak pulse current RoHS compliant with Halogen-free
Mechanical Data
Case:.
* BVCEO > 150V * IC = 1A continuous collector current * ICM = 2A peak pulse current * RoHS compliant with Halogen-free Mechanical Data * Case: SOT-23 * Molding compound: UL flammability classification rating 94V-0 * Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOT-23 Ordering . |
| Part Number | FMMT495 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | MLS Microelectronics |
| Overview |
Features
• Low VCE(sat) • hFE characterised up to 1A for high current gain hold up • For general amplification
FMMT495
Transistor (NPN)
C
495
SOT-23 top view
Schematic diagram
B
E
Marking and p.
* Low VCE(sat) * hFE characterised up to 1A for high current gain hold up * For general amplification FMMT495 Transistor (NPN) C 495 SOT-23 top view Schematic diagram B E Marking and pin assignment Maximum Ratings(Ta=25℃ unless otherwise noted) Symbol Parameter VCBO VCEO VEBO Ic Pc RθJA T. |