| Part Number | IRF1010E |
|---|---|
| Manufacturer | International Rectifier |
| Overview |
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi.
uous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt * Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-3. |
IRF1010E Datasheet
The IRF1010E is a Power MOSFET.
| Part Number | IRF1010E |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF1010E， IIRF1010E
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested .
*Static drain-source on-resistance: RDS(on) ≤12mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta=2. |