The IRF130 is a N-Channel MOSFET Transistor.
| Package | TO-3 |
|---|---|
| Mount Type | Through Hole |
| Pins | 2 |
| Height | 7.74 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRF130 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Drain Current ID=14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) ·High Power,High Speed Applications APPLICATIONS ·Switching power suppl. ITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=8A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=100V; VGS=0 VSD Diode Forward Volt. |
| Part Number | IRF130 Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | International Rectifier |
| Overview |
HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-.
* Repetitive Avalanche Ratings * Dynamic dv/dt Rating * Hermetically Sealed * Simple Drive Requirements * ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain . |
| Part Number | IRF130 Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview | . . |
| Part Number | IRF130 Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Seme LAB |
| Overview |
IRF130
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N–CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
• HERMETICALLY SEALE.
* HERMETICALLY SEALED TO *3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 100V 14A 0.18Ω * SIMPLE DRIVE REQUIREMENTS * SCREENING OPTIONS AVAILABLE 1.. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
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| Part Number | Manufacturer | Description |
|---|---|---|
| IRF1302 | International Rectifier | Power MOSFET |
| IRF1302L | International Rectifier | Power MOSFET |
| IRF130 | Samsung Semiconductor | N-Channel Power MOSFET |
| IRF1302S | International Rectifier | Power MOSFET |
| IRF130 | Intersil | N-Channel Power MOSFET |
| IRF130SMD | Seme LAB | N-Channel Power MOSFET |