| Part Number | IRF1407S Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi. on. The through-hole version (IRF1407L) is available for low-profile applications. HEXFET® Power MOSFET VDSS RDS(on) ID 75V 0.0078 100A D D S G D2 Pak IRF1407SPbF S GD TO-262 Pak IRF1407LPbF G Gate D Drain S Source Base part number IRF1407LPbF IRF1407SPbF Package Type TO-262 D2-Pak S. |
IRF1407S Datasheet and Specifications PDF
The IRF1407S is a Power MOSFET.
| Part Number | IRF1407S Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switc. sipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1407L) is available for lowprofile applications. ID = 100AV D2Pak IRF1407S TO-262 IRF1407L Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/d. |
| Part Number | IRF1407S Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
Isc N-Channel MOSFET Transistor
IRF1407S
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations.
*With To-263(D2PAK) package *Low input capacitance and gate charge *Low gate input resistance *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE . |