The IRF150 is a N-Channel Power MOSFET.
| Height | 24.99 mm |
|---|---|
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRF150 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | . . |
| Part Number | IRF150 Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Nell Power Semiconductor |
| Overview | The Nell IRF150 is a three-terminal silicon device with current conduction capability of 42A, fast switching speed, low on-state resistance, breakdown voltage rating of 100V, and max. threshold voltag. RDS(ON) = 0.055Ω @ VGS = 10V Ultra low gate charge(110nC Max.) Low reverse transfer capacitance (CRSS = 230pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature D (Drain) G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(. |
| Part Number | IRF150 Datasheet |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.055Ω(Max) ·High Power,High Speed Applications ·Minimum Lot-to-Lot variations for. TICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=20A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Curren. |
| Part Number | IRF150 Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | International Rectifier |
| Overview | PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF150 BVDSS 100V RDS(on) 0.055Ω ID 38A IRF150 JANTX2N6764 JANTXV2N6764 [R. n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuo. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IRF1503 | Inchange Semiconductor | N-Channel MOSFET |
| IRF1503LPBF | International Rectifier | Power MOSFET |
| IRF153 | IXYS | HIGH VOLTAGE POWER MOSFET DIE |
| IRF1503SPBF | International Rectifier | Power MOSFET |
| IRF1503 | International Rectifier | AUTOMOTIVE MOSFET |
| IRF151 | IXYS | HIGH VOLTAGE POWER MOSFET DIE |
| IRF152 | IXYS | HIGH VOLTAGE POWER MOSFET DIE |