IRF1503 Datasheet and Specifications PDF

The IRF1503 is a N-Channel MOSFET.

Key Specifications

PackageD2PAK
Mount TypeSurface Mount
Pins3
Height5.084 mm
Length10.668 mm
Width9.65 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
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Part NumberIRF1503 Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1503， IIRF1503 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.3mΩ ·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=250μA) ·Fast.
*Static drain-source on-resistance: RDS(on) ≤3.3mΩ
*Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=250μA)
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*reliable device for use in a wide variety of ap.
Part NumberIRF1503 Datasheet
DescriptionAUTOMOTIVE MOSFET
ManufacturerInternational Rectifier
Overview Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional fe.
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* RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junc.

Price & Availability

Seller Inventory Price Breaks Buy
Arrow Electronics 57 1+ : 1.766 USD
10+ : 1.628 USD
25+ : 1.554 USD		 View Offer
Rochester Electronics 3570 25+ : 1.28 USD
100+ : 1.22 USD
500+ : 1.15 USD
1000+ : 1.09 USD		 View Offer
RS (Formerly Allied Electronics) 0 3200+ : 5.7 USD
6400+ : 5.59 USD
16000+ : 5.43 USD
32000+ : 5.19 USD		 View Offer

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