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IRF5305 Datasheet

The IRF5305 is a Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberIRF5305
ManufacturerInternational Rectifier
Overview Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe. EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
* Operating Jun.
Part NumberIRF5305
DescriptionP-Channel MOSFET
ManufacturerInchange Semiconductor
Overview ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ·ABSOLUTE MAXIMUM R.
*Static drain-source on-resistance: RDS(on)≤0.06Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRIPTION
*Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely eff.

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