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IRF5305S Datasheet

The IRF5305S is a Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberIRF5305S
ManufacturerInternational Rectifier
Overview l l D VDSS = -55V RDS(on) = 0.06Ω G ID = -31A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are. te up to 2.0W in a typical surface mount application. The through-hole version (IRF5305L) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain C.
Part NumberIRF5305S
DescriptionP-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variati.
*Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -16A)
*Advanced trench process technology
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Fast switching application.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL .

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