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IRF7342PBF Datasheet

The IRF7342PBF is a Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberIRF7342PBF
ManufacturerInternational Rectifier
Overview l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -55V RDS(on) = 0.105Ω 6 5 Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques . is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C VGS VGSM EAS dv/dt TJ, TSTG Drain- .
Part NumberIRF7342PBF
DescriptionPower MOSFET
ManufacturerInfineon
Overview Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe. pace. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 IRF7342PbF G Gate D Drain S Source Base part number IRF7342PbF Package Type SO-8 Standard Pack Form Quantity T.