IRF9530 Datasheet and Specifications PDF

The IRF9530 is a Power MOSFET.

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Part NumberIRF9530 Datasheet
ManufacturerInternational Rectifier
Overview . .
Part NumberIRF9530 Datasheet
DescriptionP-Channel MOSFET
ManufacturerKexin Semiconductor
Overview DIP Type MOSFET P-Channel MOSFET IRF9530 (KRF9530) TO-220 9.90 ± 0.20 (8.70) ø3.60 ± 0.10 4.50 ± 0.20 1.30 +0.10 –0.05 2.80 ± 0.10 (1.70) 1.30 ± 0.10 ■ Features ● VDS (V) =-100V ● ID =-13 A .
* VDS (V) =-100V
* ID =-13 A (VGS =-10V)
* RDS(ON) < 205mΩ (VGS =-10V)
* RDS(ON) < 300mΩ (VGS =-4.5V)
* Absolute Maximum Ratings Ta = 25℃ 13.08 ± 0.20 (1.00) 9.20 ± 0.20 (1.46) (45 ) (3.00) (3.70) 15.90 ± 0.20 18.95MAX. 10.08 ± 0.30 1.27 ± 0.10 1.52 ± 0.10 123 2.54TYP [2.54 ± 0.20 ] 0.80 ±.
Part NumberIRF9530 Datasheet
DescriptionP-Channel Power MOSFET
ManufacturerIntersil
Overview IRF9530, RF1S9530SM Data Sheet July 1999 File Number 2221.4 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are adv.
* 12A, 100V
* rDS(ON) = 0.300Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Info.
Part NumberIRF9530 Datasheet
DescriptionP-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc P-Channel Mosfet Transistor INCHANGE Semiconductor IRF9530 FEATURES ·-12A,-100V ·Single pulse avalanche energy rated ·Static Drain-Source On-Resistance: RDS(on) =0.3Ω(Max) ·SOA is power dissipat.
*-12A,-100V
*Single pulse avalanche energy rated
*Static Drain-Source On-Resistance: RDS(on) =0.3Ω(Max)
*SOA is power dissipation limited
*Nanosecond switching speeds
*Linear transfer characteristics
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION
*The.