| Part Number | IRFP2907Z |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t. l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 75V RDS(on) = 4.5mΩ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processin. |
IRFP2907Z Datasheet
The IRFP2907Z is a AUTOMOTIVE MOSFET.
| Part Number | IRFP2907Z |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IRFP2907Z，IIRFP2907Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤4.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d.
*Static drain-source on-resistance: RDS(on)≤4.5mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Ultra Low On-resistance *Fast Switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Dr. |