| Part Number | IRFZ46N Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFZ46N， IIRFZ46N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤16.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested .
*Static drain-source on-resistance: RDS(on) ≤16.5mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta. |
IRFZ46N Datasheet and Specifications PDF
The IRFZ46N is a N-Channel MOSFET.
| Part Number | IRFZ46N Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview |
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi.
VGS @ 10V Pulsed Drain Current Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt * Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Therm. |