| Part Number | IRL3705N Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRL3705N， IIRL3705N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤10mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested .
*Static drain-source on-resistance: RDS(on) ≤10mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta=2. |
IRL3705N Datasheet and Specifications PDF
The IRL3705N is a N-Channel MOSFET.
| Part Number | IRL3705N Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview | Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig. rm Quantity Tube 50 Orderable Part Number IRL3705NPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor. |