| Part Number | MJE13003A |
|---|---|
| Manufacturer | First Silicon |
| Overview | SEMICONDUCTOR TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. FEATURES Excellent Switching Times : ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1.5A High C. Excellent Switching Times : ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1.5A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25˚C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Collector Current DC Pulse Collector Power Dissipation. |
MJE13003A Datasheet
The MJE13003A is a TRIPLE DIFFUSED NPN TRANSISTOR.
| Part Number | MJE13003A |
|---|---|
| Description | NPN Silicon Transistor |
| Manufacturer | Micro Commercial Components |
| Overview |
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MJE13003A
Features
• Capable of 1.25Watts of P.
* Capable of 1.25Watts of Power Dissipation. * Collector-current 1.5A * Collector-base Voltage 700V * Operating and storage junction temperature range: -55OC to +150OC * Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Electrical Characteristics @ 25OC Unless Otherwise Spe. |
| Part Number | MJE13003A |
|---|---|
| Description | Silicon NPN Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.0(Max) @ IC= 1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable . SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 89 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specif. |