P5506BDG Datasheet
P5506BDG Datasheet (Niko)
Niko
NIKO-SEM N-Channel Logic Level Enhancement P5506BDG Mode Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60 55mΩ ID 22A D G 1.GATE 2.DRAIN 3.SOURCE.
Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current1 Drain-Source On-State Resistance1 ID(ON) RDS(ON) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V VDS = 40V, V.
P5506BDG Datasheet (UNIKC)
UNIKC
P5506BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 55mΩ @VGS = 10V ID 22A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDI.
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