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R6009KNJ Datasheet

The R6009KNJ is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberR6009KNJ
ManufacturerInchange Semiconductor
Overview ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source.
*Drain Current
*ID= 9A@ TC=25℃
*Drain Source Voltage- : VDSS=600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 535mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies and.
Part NumberR6009KNJ
DescriptionPower MOSFET
ManufacturerROHM
Overview R6009KNJ   Nch 600V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.535Ω ±9A 94W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; Ro. 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lOutline TO-263 SC-83 LPT(S)          lInner circuit    Datasheet   lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width.