SI4953DY Datasheet and Specifications PDF

SMD Type Dual P-Channel MOSFET SI4953DY (KI4953DY) ■ Features ● VDS (V) =-30V ● ID =-4.9 A (VGS =-10V) ● RDS(ON) ＜ 53mΩ (VGS =-10V) ● RDS(ON) ＜ 95mΩ (VGS =-4.5V) S1 S2 +0.04 0.21 -0.02 SOP-8 G1.

* VDS (V) =-30V
* ID =-4.9 A (VGS =-10V)
* RDS(ON) ＜ 53mΩ (VGS =-10V)
* RDS(ON) ＜ 95mΩ (VGS =-4.5V) S1 S2 +0.04 0.21 -0.02 SOP-8 G1 G2 MOSFET 1.50 0.15 1 Source1 2 Gate1 3 Source2 4 Gate2 5 Drain2 6 Drain2 7 Drain1 8 Drain1 D1 D1 D2 D2
* Absolute Maximum Ratings Ta = 25℃ Drain-Source V.

Si4953DY Vishay Siliconix Dual P-Channel 30-V(D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.053 @ VGS = - 10 V - 30 0.095 @ VGS = - 4.5 V ID (A) - 4.9 - 3.6 FEATURES D 100% Rg Tested SO-8 .

D 100% Rg Tested SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4953DY Si4953DY-T1 (with Tape and Reel) S1 G1 S2 G2 D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Sourc.

These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switchi.

• -4.9 A, -30 V. RDS(on) = 0.053 Ω @ VGS = -10 V RDS(on) = 0.095 Ω @ VGS = -4.5 V. • Low gate charge. • Fast switching speed. • High power and current handling capability. ' ' ' ' 62 * 6 * 6 $EVROXWH 0D[LPXP 5DWLQJV R ÃÃÃÃÃÃÃU $2!$ 8ȁyr††Ã‚‡ur… v†rÁ‚‡rq 6PERO W'66 W*66 D' Q' 3DUD.

Si4953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) –30 rDS(on) (W) 0.053 @ VGS = –10 V 0.095 @ VGS = –4.5 V ID (A) "4.9 "3.6 SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 T.

se request FaxBack document #1235. A SPICE Model data sheet is available for this product (FaxBack document #5152). Siliconix 1 S-47958
*Rev. C, 15-Apr-96 Si4953DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leaka.