| Part Number | STP11NM60N |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of t.
Type STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.45Ω <0.45Ω <0.45Ω <0.45Ω ID
3
3 2
1 2
1
10A 10A 10A (1) 10A
TO-220
IPAK
3
1. Limited only by maximum temperature allowed * * * 1 3 100% avalanche tested Low input capacitance and gate charge Low. |
STP11NM60N Datasheet
The STP11NM60N is a N-CHANNEL Power MOSFET.
| Part Number | STP11NM60N |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel Mosfet Transistor
·FEATURES ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Drain Current ID= 10A@ TC=25℃ *Drain Source Voltage- : VDSS=600V(Min) *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE . |