The TK10A60D is a N-Channel MOSFET.
| Mount Type | Through Hole |
|---|---|
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | TK10A60D Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High. y loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum r. |
| Part Number | TK10A60D Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
iscN-Channel MOSFET Transistor
INCHANGE Semiconductor
TK10A60D，ITK10A60D
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 0.58Ω (typ.) ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA).
*Low drain-source on-resistance: RDS(ON) = 0.58Ω (typ.) *Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Switching Voltage Regulators *ABSOLUTE MAXIMUM RATINGS(Ta=25℃). |
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| Part Number | Manufacturer | Description |
|---|---|---|
| TK10A60E | Toshiba | MOSFETs |
| TK10A60W5 | Toshiba | Silicon N-Channel MOSFET |
| TK10A60W | Toshiba | Silicon N-Channel MOSFET |
| TK10A60D5 | Inchange Semiconductor | N-Channel MOSFET |
| TK10A60W5 | Inchange Semiconductor | N-Channel MOSFET |
| TK10A60W | Inchange Semiconductor | N-Channel MOSFET |
| TK10A60D5 | Toshiba | Silicon N-Channel MOSFET |