TK12A60W Datasheet
TK12A60W Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK12A60W,ITK12A60W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.265Ω (typ.) ·Easy to control Gate switching ·Enhancement mode: Vth = .
*Low drain-source on-resistance: RDS(ON) = 0.265Ω (typ.)
*Easy to control Gate switching
*Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.6 mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*Switching Voltage Regulators.
TK12A60W Datasheet (Toshiba)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOS) TK12A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Struct.
(1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit TK12A60W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolu.