-10A Datasheet | Specifications & PDF Download

GBJ10005 - GBJ1010 10A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 150

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TA8210AH / AL TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8210AH,TA8210AL 20W BTL × 2ch Audio Power Amplifier The thermal resistan

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MOSFETs Silicon N-Channel MOS (DTMOS) TK10A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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PFC Circuit. SEMICONDUCTOR TECHNICAL DATA U10A6CI ULTRA FAST RECOVERY RECTIFIER DIODE FEATURES Ultra-Fast Recovery Time for High Efficiency. Low Fo

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FTP23N10A N-Channel MOSFET Applications: • Automotive • DC Motor Control Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Cur

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Transient Voltage Suppressors 1.5SMBJxxA(CA) DESCRIPTION: TVS diodes can be used in a wide range ofapplications which like consumer electronic produ

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TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications • Low drain-source ON-resistan

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TEL: (858) 621-2700 URL: www.zcomm.com EMAIL: applications@zcomm.com Voltage-Controlled Oscillator Surface Mount Module Applications Radio Communicati

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SEMICONDUCTOR TECHNICAL DATA U10A3CIC ULTRA FAST RECOVERY RECTIFIER DIODE SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION. F

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SDM10C60TA2 Datasheet 600V/10A 3-PHASE FULL-BRIDGE DRIVER (INTELLIGENT POWER MODULE) 1.DESCRIPTION SDM10C60TA2 is a 3-phase brushless DC motor drive

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FDB0165N807L N-Channel PowerTrench® MOSFET December 2015 FDB0165N807L N-Channel PowerTrench® MOSFET 80 V, 310 A, 1.6 mΩ Features General Descripti

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Data Sheet Customer: Product: Transient Voltage Suppressors 5000W – 5.0SMCJ Series Package : DO-214AB(SMC) Issued Date: 10-Feb.-2015 Edition: Ver. 1

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Transient Voltage Suppressor Product specification SMBJ5.0A - SMBJ440A Features  Low profile package with built-in strain relief for SMT applicatio

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  P

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TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications • Low drain-source ON-resistan

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Integrated in OVP&OCP products provider 10BJ Series 1000W Transient Voltage Suppressor Description TVS diodes can be used in a wide range of applica

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VOLTAGE RANGE: 10 KV CURRENT: 5.0 m A Features High speed switching High Current High surge resisitivity for CRT discharge High reliability design Hig

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