-30A Datasheet | Specifications & PDF Download

AMT630A Video Display Controller (Product Specification) Version 1.1 2014.10 2014-09 1 AMT630A Specification (V1.0) Revision Record: Date 2014-09

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Silicon Junction FETs XIAOSHENG Symbol: Drain LH03 Series of Products interconvert: www.datasheet4u.com 2SK30A Gate Source Silicon N-Chinnel Jun

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Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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UNISONIC TECHNOLOGIES CO., LTD TDA2030A LINEAR INTEGRATED CIRCUIT 18W HI-FI AUDIO AMPLIFIER AND 35W DRIVER  DESCRIPTION The UTC TDA2030A is a mon

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www.DataSheet4U.net SAMSUNG SDI Confidential Proprietary. Spec. No. ICR18650-30A Version No. 0.0 SPECIFICATION OF PRODUCT for Lithium-ion Rechar

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TDA2030A 18 W hi-fi amplifier and 35 W driver Features ■ Output power 18 W at VS = ±16 V / 4 Ω with 0.5% distortion ■ High output current ) ■ Very

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Global LCD Panel Exchange Center www.panelook.com Samsung Secret Product Information Customer : Haier DATE : 18. Oct. 2011 SAMSUNG TFT-LCD MODEL :

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Data Group: 168 SKU: 1112010 Weight (Kg): 0.1550 Decsription: EG-530AD-2F HS Code: 8501.31.6000 Applications: DVD player, Cassette Tape Recorder, Audi

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Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extende

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Silicon N-Channel Power MOSFET CS830 A4RD ○R General Description： CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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PH5030AL N-channel TrenchMOS logic level FET Rev. 03 — 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-

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PH4030AL N-channel TrenchMOS logic level FET Rev. 05 — 14 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-

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MBR30100CT / MBRF30100CT Green 30A SCHOTTKY BARRIER RECTIFIER Product Summary MBR30100CT / MBRF30100CT (Per Leg) VRRM (V) IO (A) VF (MAX) (V) @ +

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POWER AMPLIFIER ZV75780 EN Owner’s Manual First, please carefully read the “IMPORTANT SAFETY INSTRUCTIONS” in the “Technical Specifications.” Thank

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Features • 80C52X2 Core (6 Clocks per Instruction) – Maximum Core Frequency 48 MHz in X1 Mode, 24 MHz in X2 Mode – Dual Data Pointer – Full-duplex Enh

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source V

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Product Specification ( √ ) Preliminary Specification ( ) Approval Specification The information described in this SPEC is preliminary and can be cha

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NTE5111A thru NTE5166A Zener Diode, 5 Watt ±5% Tolerance Features: D Zener Voltage: 3.3V to 200V D High Surge Current Capability Absolute Maximum Rat

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0 R XC3000 Series Field Programmable Gate Arrays (XC3000A/L, XC3100A/L) 0 7* November 9, 1998 (Version 3.1) Product Description • Complete Develop

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