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IRF630A N-Channel MOSFET Transistor

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Description

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A .
Drain Current. ID=9A@ TC=25℃. Drain Source Voltage: VDSS= 200V(Min). Static Drain-Source On-Resistance : RDS(on) = 0.

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Datasheet Specifications

Part number
IRF630A
Manufacturer
Inchange Semiconductor
File Size
256.62 KB
Datasheet
IRF630A_InchangeSemiconductor.pdf
Description
N-Channel MOSFET Transistor

Applications

* This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VDSS VGS ID Pt

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