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2SK30ATM - N-Channel MOSFET

2SK30ATM Description

2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Inpu.

2SK30ATM Applications

* Unit: mm
* High breakdown voltage: VGDS =
* 50 V
* High input impedance: IGSS =
* 1 nA (max) (VGS =
* 30 V)
* Low noise: NF = 0.5 dB (typ. ) (VDS = 15 V, VGS = 0, RG = 100 kΩ, f = 120 Hz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Ra

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N-Channel MOSFET Toshiba Semiconductor
Toshiba Semiconductor 2SK30ATM-like datasheet