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2SK30ATM Datasheet - Toshiba Semiconductor

2SK30ATM N-Channel MOSFET

2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications Unit: mm High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1 nA (max) (VGS = 30 V) Low noise: NF = 0.5 dB (typ.) (VDS = 15 V, VGS = 0, RG = 100 kΩ, f = 120 Hz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating U.

2SK30ATM_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK30ATM

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

292.43 KB

Description:

N-channel mosfet.

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2SK30ATM 2SK30ATM N-Channel MOSFET Toshiba Semiconductor

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