-50A Datasheet | Specifications & PDF Download

Cell Type UR18650A Specifications Nominal Capacity Nominal Voltage Charging Method Charging Voltage Charging Current Charging Time Ambient Temperature

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N-Channel MOSFET Applications: • Uninterruptible Power Supply(UPS) • LCD Panel Power • SMPS Power • DC-AC Inverter FSW25N50 • RoHS Compliant • Low O

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LITHIUM ION BATTERIES: INDIVIDUAL DATA SHEET CGR18650A CGR18650A: Cylindrical Model External Dimensions (mm) *2 18.5 +0 - 0.7 (+) Discharge Cha

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JW5250A 1A, 6V，1.5MHz, 40uA IQ Synchronous Step-Down Converter Preliminary Specifications Subject to Change without Notice DESCRIPTION The JW®5250A

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www.DataSheet4U.com The NS16550A UART Design and Application Considerations The NS16550A UART Design and Application Considerations BACKGROUND UARTs

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Silicon N-Channel Power MOSFET CS13N50 A8R ○R General Description： CS13N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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LITHIUM ION BATTERIES: INDIVIDUAL DATA SHEET CGR18650AF CGR18650AF: Cylindrical Model Discharge Characteristics To ensure safety, the referenced L

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N 2CZ10150 A9 ○R 2CZ10150 A9 ， 。 、 、。 ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 150 2×5 0.90 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per Di

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NJM2150A SOUND ENHANCEMENT AUDIO PROCESSOR  GENERAL DESCRIPTION  PACKAGE OUTLINE The NJM2150A is a sound enhancement audio processor which rege

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Lithium Ion NCR18650A Features & Benefits • High energy density • Long stable power and long run time • Ideal for notebook PCs, boosters, portable de

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BC850 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package. / Features ，。 Low current, Low

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N-channel MOSFET Features  500V,20A  RDS(on)=0.21Ω @VGS=10V,ID=10A  High speed switching  High ruggedness  100% avalanche tested  Improved dv/dt

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BC846 BC850 BC846 BC850 SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE = 180/290/520 Tjmax = 150°C VCEO

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BTW67 and BTW69 Series STANDARD 50A SCRs MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50 600 to 1200 80 Unit A V mA DESCRIPTION Available in

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MDQ Series Diode Modules Picture is MDQ200A  Ratings from 10A to 200A @ 12-1600 VAC  2500 Volts isolated mounting base  Strengthened current des

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GPT10N50A, GPT10N50AD POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High

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www.DataSheet4U.com Accessing the NS16550A UART in the PS 2 Model 50 60 70 and 80 Accessing the NS16550A UART in the PS 2 Model 50 60 70 and 80 INTR

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INN650D150A 650V GaN Enhancement-mode Power Transistor INN650D150A 1. General description 650V GaN-on-silicon Enhancement-mode Power Transistor in Du

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http://www.ncepower.com Pb Free Product NCE6050A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050A uses advanced trench technolog

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