0.026 Datasheet | Specifications & PDF Download

AW2026 September 2018 V1.3 3-Channel Breathing LED Driver with IIC Interface FEATURES GENERAL DESCRIPTION l  3-channel constant current LED driv

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KY-026 Flame-sensor module KY-026 Flame-sensor module Contents 1 Picture

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INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High

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www.fairchildsemi.com FSDH0265RN, FSDM0265RN Green Mode Fairchild Power Switch (FPSTM) Features • Internal Avalanche Rugged Sense FET • Consumes only

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00K4022E026 110 Delta Drive Pittsburgh, PA 15238 NAFTA Sales: (1)800-245-3984 HK Sales : (852)3102-9337 magnetics@spang.com www.mag-inc.com Kool Mµ

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Green Mode Power Switch FSDM0265RNB, FSDM0365RNB Description The FSDM0x65RNB of integrated Pulse Width Modulator (PWM) and SENSEFET® are specifically

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Tyco Electronics 1-390262-5 Product Details DIP Sockets Always EU RoHS/ELV Compliant ( Statement of Compliance) Product Highlights: 1-390262-5 TE I

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IMZA120R026M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technolo

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Analog Reinvented CONFIDENTIAL ADVANCE INFORMATION ES9026PRO 32-Bit HyperStream® II 8-Channel Audio DAC The SABRE® ES9026PRO HyperStream® II 8-chann

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Public IMW65R026M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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LCD Module Specification Version: A1 SCT024026-V01 SPECIFICATIONS FOR LCD MODULE CUSTOMER MODEL CUSTOMER APPROVED SCT024026-V01 APPROVED BY CHEC

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WNSC6D02650D-A Silicon Carbide Diode Rev.01 - 7 February 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO252 (D

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Public IMT65R026M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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IAUZN04S7N026 Automotive MOSFET OptiMOSTM 7 Power-Transistor Features • OptiMOSTM power MOSFET for automotive applications • N-channel – Enhancement

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Public IMLT65R026M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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Public IMZA65R026M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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Public IMTA65R026M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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InterFET Product Folder Technical Support Order Now N0026S N0026S Process Geometry Features • Low Input Capacitance: 4.3pF Typical • Low Gate Le

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LMH0026 www.ti.com SNLS253B – MARCH 2008 – REVISED APRIL 2013 LMH0026 SD SDI Reclocker with Dual Differential Outputs Check for Samples: LMH0026 F

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IMZC120R026M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technolo

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