0.047 Datasheet | Specifications & PDF Download

2SD1047 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized

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more than you expect Discrete Single Port 10/100 Base-T PDSO-G16 LANDatacom www.DataSheet4U.com Typical Common Electrical Characteristics 1 Inductan

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www.atcsemi.com Features ● Advanced high cell density Trench technology ● Super Low Gate Charge ● Excellent CdV/dt effect decline ● Green Device Avail

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THINKING THINKING THINKING THINKING HIGH SURGE ZINC OXIDE VARISTOR 10Ø D-SERIES Ł DIMENSION Unit:mm Disc Ø 10 Dimensions Dmax. 14.0 Lmin. 30 dnor.

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ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF MOSFET MODULE RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage A

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TVR-SERIES Part Number Code TVR-SERIES Part Number Code 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 TVR Product Code Thinking Varistor Resistance Disc

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www.DataSheet4U.com HAT1047R, HAT1047RJ Silicon P Channel Power MOS FET High Speed Power Switching Features • For Automotive Application (at Type Cod

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WESTCODE An IXYS Company Date:- 30 Jun, 2008 Data Sheet Issue:- 1 Distributed Gate Thyristor Types R0472YS12# to R0472YS16# (Old Type Number: R210SH

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® A Leading Supplier of Magnetic Components 10/100 BASE-TX 10/100 BASE TRANSFORMER Features： ● Designed to meet IEEE 802.3 requirements. ● Primary

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hybrid 23LM-K MICROSTEP .3149 +.0000 .2500 +.0000 -.0005 -.0005 OR 0 0 ( 8 -0.013 ) ( 6.35 -0.013 ) .69 (17.5) 1.8º LEAD WIRE AWG#22 UL1007 11.8 (30

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SPECIFICATION FOR APPROVAL ( ) Preliminary Specification (¡Ü) Final Specification Title BUYER MODEL FORT_REV(HS503022) TFT-LCD Timing Controller SUP

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RT5047A Single Output LNB Supply and Control Voltage Regulator General Description The RT5047A is a highly integrated voltage regulator and interfac

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WESTCODE An IXYS Company Date:- 30 Jun, 2008 Data Sheet Issue:- 1 Distributed Gate Thyristor Types R0472YS12# to R0472YS16# (Old Type Number: R210SH

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isc Silicon NPN Power Transistor isc Product Specification 2SD1047E DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Li

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www.DataSheet4U.com Ordering number : ENA0188 www.DataSheet4U.com 2SB817C / 2SD1047C 2SB817C / 2SD1047C PNP Epitaxial Planar Silicon Transistor NPN

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Dual Path RF Switch with LNA and DVGA 2.3GHz to 2.7GHz F0472 Short-Form Datasheet Description The F0472 is an integrated dual-path RF front-end cons

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