0.1uF Datasheet | Specifications & PDF Download

RBN40N125S1UFWA 1250V - 40A - IGBT Features  Renesas generation 8th Trench IGBT  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (

(4 views)

LT1280A/LT1281A Low Power 5V RS232 Dual Driver/Receiver with 0.1µF Capacitors DESCRIPTIO The LT ®1280A/LT1281A are dual RS232 driver/receiver pairs wi

(2 views)

MAX200–MAX209/ MAX211/MAX213 +5V, RS-232 Transceivers with 0.1μF External Capacitors General Description MAX200-MAX209, MAX211, and MAX213 are a fam

(2 views)

MAX200–MAX209/ MAX211/MAX213 +5V, RS-232 Transceivers with 0.1μF External Capacitors General Description MAX200-MAX209, MAX211, and MAX213 are a fam

(2 views)

Semiconductor SRA2211UF PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • •

(2 views)

Semiconductor SRC1211UF NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • •

(2 views)

www.DataSheet4U.com SDAD101 UF Series 2,500 to 15,000 VOLTS ULTRA FAST RECOVERY STACKABLE HIGH VOLTAGE RECTIFIER Solid State Devices, Inc. 14701 Fir

(2 views)

PRELIMINARY DATA SHEET www.DataSheet4U.com 4GB Unbuffered DDR2 SDRAM DIMM EBE41UF8ABFA (512M words × 64 bits, 2 Ranks) Specifications • Density: 4GB

(2 views)

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.

(2 views)

RBN75N125S1UFWA 1250V - 75A - IGBT Features  Renesas generation 8th Trench IGBT  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (

(2 views)

RBN25N125S1UFWA 1250V - 25A - IGBT Features  Renesas generation 8th Trench IGBT  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (

(2 views)

RBN40N65T1UFWA 650V - 40A - IGBT Features  Renesas generation 8th Trench IGBT  Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at

(2 views)

RBN75N65T1UFWA 650V - 75A - IGBT Features  Renesas generation 8th Trench IGBT  Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at

(2 views)

LT1280A/LT1281A Low Power 5V RS232 Dual Driver/Receiver with 0.1µF Capacitors DESCRIPTIO The LT ®1280A/LT1281A are dual RS232 driver/receiver pairs wi

(1 views)

LT1381 Low Power 5V RS232 Dual Driver/Receiver with 0.1µF Capacitors FEATURES s s s s s s s s s DESCRIPTIO s s ESD Protection over ± 10kV Low Cost

(1 views)

LT1180A/LT1181A Low Power 5V RS232 Dual Driver/Receiver with 0.1µF Capacitors FEATURES s s s s s s s s s DESCRIPTIO s s s s ESD Protection over ± 1

(1 views)

LT1180A/LT1181A Low Power 5V RS232 Dual Driver/Receiver with 0.1µF Capacitors FEATURES s s s s s s s s s DESCRIPTIO s s s s ESD Protection over ± 1

(1 views)

NEW PRODUCT INFORMATION AADDVVAANNC EC ED DMP2021UFDE P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) Max 16mΩ @ VGS = -4.5V

(1 views)

ADVANCE INFORMATION Product Summary BVDSS 20V RDS(ON) MAX 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V ID MAX TA = +25°C 11.7A 10.8A Description This new

(1 views)

7 Semiconductor S72NxxUF Standard Voltage Detector Description The function of this low reset Type IC is to accurately reset systems after detectin

(1 views)