.
Renesas
RBN40N125S1UFWA - IGBT
RBN40N125S1UFWA 1250V - 40A - IGBT Features Renesas generation 8th Trench IGBT Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (.
Renesas
RBC25A125B1UFWA - Fast Recovery Diode
RBC25A125B1UFWA 1250V - 25A - Fast Recovery Diode Features Forward voltage: VF = 2.8 V typ. (at IF = 25 A) High speed switching Applications: UP.
Diodes
DMC2041UFDB - MOSFET
DMC2041UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS Q1 N-Channel Q2 P-Channel 20V -20V RDS(ON) max 40mΩ @ VGS .
Renesas
RBC50A65B1UFWA - Fast Recovery Diode
RBC50A65B1UFWA 650V - 50A - Fast Recovery Diode Features Forward voltage: VF = 1.7 V typ. (at IF = 50 A) High speed switching Applications: UPS,.
Renesas
RBC30A65B1UFWA - Fast Recovery Diode
RBC30A65B1UFWA 650V - 30A - Fast Recovery Diode Features Forward voltage: VF = 1.7 V typ. (at IF = 30 A) High speed switching Applications: UPS,.
Diodes
DMN2011UFDF - 20V N-CHANNEL MOSFET
ADVANCE INFORMATION Product Summary BVDSS 20V RDS(ON) MAX 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V ID MAX TA = +25°C 11.7A 10.8A Description This new.
Diodes
DMN2041UFDB - Dual N-Channel MOSFET
DMN2041UFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device BVDSS N-Channel 20V RDS(ON) MAX 40mΩ @ VGS = 4.5V 65mΩ @ VGS = 2.5V ID.
DIODES
DMN2991UFZQ - 20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2991UFZQ 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V 2.4Ω.
Renesas
RBN75N125S1UFWA - IGBT
RBN75N125S1UFWA 1250V - 75A - IGBT Features Renesas generation 8th Trench IGBT Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (.
Renesas
RBN75N65T1UFWA - IGBT
RBN75N65T1UFWA 650V - 75A - IGBT Features Renesas generation 8th Trench IGBT Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at.
Renesas
RBC15A125B1UFWA - Fast Recovery Diode
RBC15A125B1UFWA 1250V - 15A - Fast Recovery Diode Features Forward voltage: VF = 2.9 V typ. (at IF = 15 A) High speed switching Applications: UP.
Diodes
BCR421UFDQ - LINEAR LED CONSTANT CURRENT REGULATOR
BCR420UFDQ / BCR421UFDQ LINEAR LED CONSTANT CURRENT REGULATOR IN U-DFN2020-6 Description These Linear LED drivers are designed to meet the stringent .
Maxim
MAX205 - +5V RS-232 Transceivers with 0.1uF External Capacitors
MAX200–MAX209/ MAX211/MAX213 +5V, RS-232 Transceivers with 0.1μF External Capacitors General Description MAX200-MAX209, MAX211, and MAX213 are a fam.
Elpida Memory
EBE41UF8ABDA - 4GB DDR2 SDRAM SO-DIMM
DATA SHEET www.DataSheet4U.com 4GB DDR2 SDRAM SO-DIMM EBE41UF8ABDA (512M words × 64 bits, 2 Ranks) Specifications • Density: 4GB • Organization 51.
Diodes
BCR421UFD - LINEAR LED CONSTANT CURRENT REGULATOR
BCR420UFD / BCR421UFD LINEAR LED CONSTANT CURRENT REGULATOR IN DFN2020-6 Description The BCR420UFD and BCR421UFD monolithically integrate transistors.
DIODES
DMN2991UFB4 - 20V N-CHANNEL MOSFET
DMN2991UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V ID .
Renesas
RBN25N125S1UFWA - IGBT
RBN25N125S1UFWA 1250V - 25A - IGBT Features Renesas generation 8th Trench IGBT Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (.
Renesas
RBN40N65T1UFWA - IGBT
RBN40N65T1UFWA 650V - 40A - IGBT Features Renesas generation 8th Trench IGBT Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at.
Maxim
MAX204 - +5V RS-232 Transceivers with 0.1uF External Capacitors
MAX200–MAX209/ MAX211/MAX213 +5V, RS-232 Transceivers with 0.1μF External Capacitors General Description MAX200-MAX209, MAX211, and MAX213 are a fam.
Sipex
SP211 - +5V High-Speed RS-232 Transceivers with 0.1uF Capacitors
® SP200/204/205/206/207/208/211/213 +5V High–Speed RS-232 Transceivers with 0.1µF Capacitors ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.1µF External Charge Pump Capacito.