.
Inchange Semiconductor
2SC3627 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Switching Speed ·Minimum Lot-to-Lo.
INCHANGE
2SD1362 - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1362 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Po.
Inchange Semiconductor
IRFP362 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP362 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Volt.
Inchange Semiconductor
IRF362 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF362 DESCRIPTION ·silicon Gate for fast switching at elevate ·rug.
Inchange Semiconductor
2SC3626 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-L.
APTech
AP3625FA - 1/4 INCH DIAPHRAGM VALVE
ADVANCED PRESSURE TECHNOLOGY Series AP 30, 35 & 36 1/4 INCH DIAPHRAGM VALVE Springless – manual and pneumatic (NC & NO) Engineering Data — Series AP .
INCHANGE
2SC3621 - NPN Transistor
isc Silicon NPN Power Transistor 2SC3621 DESCRIPTION ·Low Collector Saturation Voltage ·High breakdown voltage ·Complementary to 2SA1408 ·100% avala.
INCHANGE
2SD362 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min) ·Collector Power Dissipation- : PC= 40W(Max)@.
Inchange Semiconductor Company
KSD362 - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD362 DESCRIPTION ·Collector-Base Breakdown Voltage: V(BR)CBO= .
APTech
AP3625 - 1/4 INCH DIAPHRAGM VALVE
ADVANCED PRESSURE TECHNOLOGY Series AP 30, 35 & 36 1/4 INCH DIAPHRAGM VALVE Springless – manual and pneumatic (NC & NO) Engineering Data — Series AP .
INCHANGE
2SB1362 - PNP Transistor
isc Silicon PNP Power Transistor 2SB1362 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Wide Area of Safe Operation ·Comp.
