0.362-INCH Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min) ·Collector Power Dissipation- : PC= 40W(Max)@

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD362 DESCRIPTION ·Collector-Base Breakdown Voltage: V(BR)CBO=

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ADVANCED PRESSURE TECHNOLOGY Series AP 30, 35 & 36 1/4 INCH DIAPHRAGM VALVE Springless – manual and pneumatic (NC & NO) Engineering Data — Series AP

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP362 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Volt

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ADVANCED PRESSURE TECHNOLOGY Series AP 30, 35 & 36 1/4 INCH DIAPHRAGM VALVE Springless – manual and pneumatic (NC & NO) Engineering Data — Series AP

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF362 DESCRIPTION ·silicon Gate for fast switching at elevate ·rug

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Switching Speed ·Minimum Lot-to-Lo

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-L

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isc Silicon NPN Power Transistor 2SC3621 DESCRIPTION ·Low Collector Saturation Voltage ·High breakdown voltage ·Complementary to 2SA1408 ·100% avala

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isc Silicon PNP Power Transistor 2SB1362 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Wide Area of Safe Operation ·Comp

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1362 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Po

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