2SD1362 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *Collector Power Dissipation- : PC= 40W@ TC= 25℃ *Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 4A *Complement to Type 2SB992 *Minimum Lot-to-Lot variations for robust device performance and reliable operat
