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2SD1362 NPN Transistor

2SD1362 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1362 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Collector Power Dissipation- : PC= 40W@ TC= 25℃. Low Collector Saturation Volt.

2SD1362 Applications

* High current switching applications.
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB

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Datasheet Details

Part number
2SD1362
Manufacturer
INCHANGE
File Size
202.49 KB
Datasheet
2SD1362-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1362-like datasheet