2SD1366A
Hitachi Semiconductor
24.90 KB
Silicon npn transistor.
2SD1366A
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
UPAK
1 3 2
4
1. Base 2. Collector 3. Emitter 4. Collector (Flang.
📁 Related Datasheet
2SD1366 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SD1366
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
UPAK
1 3 2
4
1. Base 2. Collector 3. Emitter 4. Collector (Flange.
2SD1360 - Silicon NPN Transistor
(Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
IGNITER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES . High DC Current Gain : h FE.
2SD1360 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1360
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) .
2SD1361 - Silicon NPN Transistor
(Toshiba)
:
2SD1361
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES . High DC Current .
2SD1361 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1361
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min) .
2SD1362 - Silicon NPN Transistor
(Toshiba)
:
2SD1362
m
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH CURRENT SWITCHING APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm
POWER AMPLIFIER APPLICATIONS..
2SD1362 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1362
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Collector Po.
2SD1363 - Silicon NPN Transistor
(Toshiba)
:
SILICON NPN TRIPLE DIFFUSED TYPE
—
HIGH CURRENT SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATIONS.
FEATURES . High Collector Current : Ic=7A . .
