* . High Collector Current : Ic=7A . Low Saturation Voltage : VcE(sat)=0. 5V(Max. ) . High Collector Power Dissipation : Pc=40W (at Tc=25°C) . Complementary to 2SB992 (at Ic=4A) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector C
2SD1362
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Silicon npn transistor.
:
2SD1362
m
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH CURRENT SWITCHING APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm
POWER AMPLIFIER APPLICATIONS..
📁 Related Datasheet
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IGNITER APPLICATIONS.
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(Toshiba)
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SILICON NPN TRIPLE DIFFUSED TYPE
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(Hitachi Semiconductor)
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Application
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Outline
UPAK
1 3 2
4
1. Base 2. Collector 3. Emitter 4. Collector (Flange.
