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2SD1353 - Silicon NPN Transistor

Features

  • . High DC Current Gain of 200 to 1200 at V CE=5V, Ic=0.5A . Low VcE(sat) of 1 . 0V (Max. ) at Ic=lA, Ib=0.02A . Collector Power Dissipation of 30W at Tc=25°C Unit in mm 0z. z±az.

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Full PDF Text Transcription

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SILICON NPN TRIPLE DIFFUSED TYPE 2SD1353 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . High DC Current Gain of 200 to 1200 at V CE=5V, Ic=0.5A . Low VcE(sat) of 1 . 0V (Max.) at Ic=lA, Ib=0.02A . Collector Power Dissipation of 30W at Tc=25°C Unit in mm 0z.z±az MAXIMUM RATINGS (Ta=25 c) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 50 Collector-Emitter Voltage VcEO 50 Emitter-Base Voltage VEBO Collector Current ic Base Current Collector Power Dissipation Ta=25°C Tc=25 C IB 0.5 1.5 30 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER Junction Temperature 150 Storage Temperature Range Tstg -55~150 TOSHIBA 2-10K1A ELECTRICAL CHARACTERISTICS (Ta=25 C) Weight : 2 . Og CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX.
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