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2SD1361 Datasheet - Toshiba

Silicon NPN Transistor

2SD1361 Features

* . High DC Current Gain : h FE=2000(Min. ) (V CE=2V, I C=2A) INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 0&2±o.2 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 300 V Collector-Emitter Voltage Emitter-Base Voltage VcEO 250 V VeBO 5V Collector Current

2SD1361 Datasheet (90.04 KB)

Preview of 2SD1361 PDF

Datasheet Details

Part number:

2SD1361

Manufacturer:

Toshiba ↗

File Size:

90.04 KB

Description:

Silicon npn transistor.

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2SD1361 Silicon NPN Transistor Toshiba

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