Datasheet Details
- Part number
- 2SD130
- Manufacturer
- INCHANGE
- File Size
- 177.33 KB
- Datasheet
- 2SD130-INCHANGE.pdf
- Description
- NPN Transistor
2SD130 Description
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD130 .
DC Current Gain -hFE = 15(Min)@ IC= 3A.
Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 60V(Min).
Minimum Lot-to-Lot variations for rob.
2SD130 Applications
* Designed for use in general purpose amplifier and switching
applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
3.0
A
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