2SD130 Datasheet - INCHANGE

2SD130, NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD130 .
DC Current Gain -hFE = 15(Min)@ IC= 3A. Collector-Emitter Breakdown Voltage- : V(BR) CEO= 60V(Min). Minimum Lot-to-Lot variations for rob.

Applications

* Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 3.0 A

2SD130-INCHANGE.pdf