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2SD130 - NPN Transistor

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Part number 2SD130
Manufacturer INCHANGE
File Size 177.33 KB
Description NPN Transistor
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Description

DC Current Gain -hFE = 15(Min)@ IC= 3A Collector-Emitter Breakdown Voltage- : V(BR) CEO= 60V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuou

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