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2SD130 - NPN Transistor

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Description

DC Current Gain -hFE = 15(Min)@ IC= 3A Collector-Emitter Breakdown Voltage- : V(BR) CEO= 60V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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Datasheet Details

Part number 2SD130
Manufacturer INCHANGE
File Size 177.33 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD130 DESCRIPTION ·DC Current Gain -hFE = 15(Min)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak 5.0 A IB Base Current 1.0 A PC Collector Power Dissipation@TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.
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