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2SD1304 - Silicon NPN Transistor

Datasheet Summary

Features

  • q Zener diode built in. q Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 20±3 20±3 7 200 100 200 150.
  • 55 ~ +150 Unit V.

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Datasheet Details

Part number 2SD1304
Manufacturer Panasonic Semiconductor
File Size 54.46 KB
Description Silicon NPN Transistor
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Transistor 2SD1304 Silicon NPN epitaxial planer type For low-frequency amplification s Features q Zener diode built in. q Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 20±3 20±3 7 200 100 200 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C Unit: mm 0.65±0.15 +0.2 2.8 –0.3 +0.25 1.5 –0.05 0.65±0.15 1.45 1 3 2 +0.1 0.4 –0.05 +0.2 2.9 –0.05 1.9±0.2 0.95 0.95 +0.1 0.16 –0.06 +0.2 1.1 –0.1 0.8 0 to 0.1 0.1 to 0.3 0.4±0.
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