2SD1309 Silicon NPN Darlington Power Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain :hFE= 2000(Min) @ IC= 3A. Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 100V (Min). Low Collector-Emitter Satura.

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Datasheet Specifications

Part number: 2SD1309
Manufacturer: INCHANGE
File Size: 216.03 KB
Datasheet: 2SD1309-INCHANGE.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for audio frequency amplifier and low-speed switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current 8 A ICM Co

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2SD1309 Silicon NPN Darlington Power Transistor INCHANGE

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