2SD1314 Datasheet - Toshiba Semiconductor

2SD1314 NPN Transistor

2SD1314 TOSHIBA Transistor www.DataSheet4U.com Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD1314 Unit: mm High Power Switching Applications Motor Control Applications High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A) High speed: tf = 3 μs (max) (IC = 15 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emi.

2SD1314_ToshibaSemiconductor.pdf