2SD1316
Panasonic Semiconductor
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Npn transistor.
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isc Silicon NPN Power Transistor
2SD1311
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage-.
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DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage-
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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
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..
DESCRIPTION ·With TO-3PL package ·High pow.
2SD1314 - NPN Transistor
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2SD1314
Unit: mm
High Power Switching.
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DESCRIPTION ·High DC Current Gain
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DESCRIPTION ·DC Current Gain -hFE = 15(Min)@ IC= 3A ·Collector-Emitter Breakdown Volt.