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2SD1311 - NPN Transistor

2SD1311 Description

isc Silicon NPN Power Transistor 2SD1311 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min). Low Collector Saturation Voltage- : VCE(sat)= 1. Minimum Lot.

2SD1311 Applications

* Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 4 A ICM Collector C

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Datasheet Details

Part number
2SD1311
Manufacturer
INCHANGE
File Size
204.32 KB
Datasheet
2SD1311-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1311-like datasheet