2SD1311 Datasheet - INCHANGE

2SD1311, NPN Transistor

isc Silicon NPN Power Transistor 2SD1311 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min). Low Collector Saturation Voltage- : VCE(sat)= 1. Minimum Lot.

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2SD1311-INCHANGE.pdf

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Datasheet Details

Part number:

2SD1311

Manufacturer:

INCHANGE

File Size:

204.32 KB

Description:

NPN Transistor

Applications

* Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 4 A ICM Collector C

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2SD1311 NPN Transistor INCHANGE

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