2SD1311 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) *Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 3A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for audio frequency power amplifier applications.
