2SD1318
Panasonic Semiconductor
350.05kb
Si npn transistor.
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2SD1310 - NPN Silicon Triple Diffused Transistor
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2SD1311 - NPN Transistor
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isc Silicon NPN Power Transistor
2SD1311
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage-.
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DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage-
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Product Specification
Silicon NPN Power Transistors
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DESCRIPTION ·With TO-3PL package ·High pow.
2SD1314 - NPN Transistor
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Unit: mm
High Power Switching.
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DESCRIPTION ·High DC Current Gain
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2SD1316
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s (TC=25˚C)
TC=25°C Ta=25°C
VCBO VC.
2SD130 - NPN Transistor
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DESCRIPTION ·DC Current Gain -hFE = 15(Min)@ IC= 3A ·Collector-Emitter Breakdown Volt.