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2SD1301 - NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max.)@ IC= 1A Wide area of safe operation Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC

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Datasheet Details

Part number 2SD1301
Manufacturer INCHANGE
File Size 191.85 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1301 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max.)@ IC= 1A ·Wide area of safe operation ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications.
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