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2SD1301 - NPN Transistor

2SD1301 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1301 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. Low Collector Saturation Voltage- : VCE(sat)= 3.

2SD1301 Applications

* Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage(VBE= 0) 1500 V VEBO IC Emitter-Base Voltage Collector Current- Continuous 5 V 2 A ICM Collec

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Datasheet Details

Part number
2SD1301
Manufacturer
INCHANGE
File Size
191.85 KB
Datasheet
2SD1301-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1301-like datasheet