2SD1301 Datasheet - INCHANGE

2SD1301, NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1301 DESCRIPTION *High Breakdown Voltage- : VCBO= 1500V (Min) *High Switching Spe

Applications

* Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage(VBE= 0) 1500 V VEBO IC Emitter-Base Voltage Collector Current- Continuous 5 V 2 A ICM Collec

2SD1301-INCHANGE.pdf