2SD1301 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

2SD1301

Manufacturer:

INCHANGE

File Size:

191.85kb

Download:

📄 Datasheet

Description:

Npn transistor.

High Breakdown Voltage- : VCBO= 1500V (Min)

High Switching Speed

Low Collector Saturation Voltage- : VCE(s

2SD1301 Application

• Applications
• Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO

TAGS

2SD1301

INCHANGE

📁 Related Datasheet

2SD130 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD130 DESCRIPTION ·DC Current Gain -hFE = 15(Min)@ IC= 3A ·Collector-Emitter Breakdown Volt.

2SD1300 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1300 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Co.

2SD1302 - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm 5.0±0.2 4.0±0.2 s .

2SD1303 - NPN Transistor (SEMTECH)
ST 2SD1303 NPN Silicon Epitaxial Planar Transistor for audio muting application. On special request, these transistors can be manufactured in differen.

2SD1304 - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SD1304 Silicon NPN epitaxial planer type For low-frequency amplification s Features q Zener diode built in. q Mini type package, allowing .

2SD1306 - Silicon NPN Transistor (Hitachi Semiconductor)
2SD1306 Silicon NPN Epitaxial ADE-208-1144 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier, Muting Outline MPAK 3 1 2 1. Emitter 2..

2SD1306 - Silicon NPN Transistor (Renesas)
2SD1306 Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 Prelimi.

2SD1307 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1307 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 350V(Min) ·High DC cur.

2SD1308 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain :hFE= 2000(Min) @ IC= 2A ·Collector-Emitter Sustaining Voltage- :VCEO(S.

2SD1308 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1308 .. DESCRIPTION ·With TO-220 package ·Low coll.