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ST 2SD1303
NPN Silicon Epitaxial Planar Transistor for audio muting application.
On special request, these transistors can be manufactured in different pin configurations.
Features
˙ High emitter-base voltage VEBO=7.5V(min)* ˙ High reverse hFE
reverse hFE=20(min) (VCE=2V, IC=4mA)
˙ Low on resistance
Ron=0.6Ω (Typ.) (IB=1mA)
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25 oC)
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC IB Ptot Tj TS
G S P FORM A IS AVAILABLE
Value 25 16 7.5* 300 30 400 125
-55 to +125
Unit V V V mA mA
mW OC OC
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.
2SD1303 Datasheet
