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ST 2SD1691T
NPN Silicon Epitaxial Power Transistor
For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain.
E C B
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Collector Current (pulse)
1)
TO-126 Plastic Package Symbol VCBO VCEO VEBO IC(DC) IB(DC) IC(pulse) Ptot Ptot Tj TS Value 60 60 7 5 1 8 1.3 20 150 -55 to +150 Unit V V V A A A W W
O
Total power dissipation (Ta = 25 OC) Total power dissipation (Tc = 25 OC) Junction Temperature Storage Temperature Range PW≦10ms, duty cycle≦50%.
2SD1691T Datasheet
