Datasheet Details
- Part number
- 2SD1695
- Manufacturer
- NEC
- File Size
- 276.99 KB
- Datasheet
- 2SD1695_NEC.pdf
- Description
- NPN SILICON EPITAXIAL TRANSISTOR
2SD1695 Description
www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AM.
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.
2SD1695 Features
* On-chip protection elements enable time and cost reduction. C to E: Dumper diode C to B: Constant diode
* Low collector saturation voltage
QUALITY GRADES
* Standard
DataShee
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Electrode Connection 1. Emitter 2. Collector 3. Base 4. Collector (fin)
Please
2SD1695 Applications
* ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO
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