2SD1695 NPN SILICON EPITAXIAL TRANSISTOR

NEC

Description

www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AM.
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

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Datasheet Specifications

Part number: 2SD1695
Manufacturer: NEC
File Size: 276.99 KB
Datasheet: 2SD1695_NEC.pdf
Description: NPN SILICON EPITAXIAL TRANSISTOR

Features

* On-chip protection elements enable time and cost reduction. C to E: Dumper diode C to B: Constant diode
* Low collector saturation voltage QUALITY GRADES
* Standard DataShee DataSheet4U. com Electrode Connection 1. Emitter 2. Collector 3. Base 4. Collector (fin) Please

Applications

* ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO

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2SD1695 NPN SILICON EPITAXIAL TRANSISTOR NEC

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